CGH31240F
- Manufacturer Cree, Inc.
- Part Number CGH31240F
- Description RF JFET Transistors 240W, GaN HEMT, 28V, 2.7-3.1GHz, IM FET, Flange
- Category RF JFET Transistors
Specifications
| Package | 440201 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Transistor Polarity | N-Channel |
| Development Kit | CGH31240F-TB |
| Vgs th - Gate-Source Threshold Voltage | - 3 V |
| Application | - |
| Type | GaN SiC HEMT |
| Fall Time | - |
| Product | GaN HEMT |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
| Maximum Drain Gate Voltage | - |
| Brand | Cree, Inc. |
| Shipping Restrictions | |
| Gain | 12 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Class | - |
| Transistor Type | HEMT |
| P1dB - Compression Point | - |
| Operating Temperature Range | - |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 24 A |
| Length | 24.33 mm |
| Output Power | 240 W |
| Rds On - Drain-Source Resistance | - |
| Operating Frequency | 2.7 GHz to 3.1 GHz |
| Product Type | RF JFET Transistors |
| Typical Turn-Off Delay Time | - |
| Subcategory | Transistors |
| Width | 23.62 mm |
| Gate-Source Cutoff Voltage | - |
| Height | 3.76 mm |
| Mounting Style | Screw Mount |
| NF - Noise Figure | - |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | - |
| Rise Time | - |
| Technology | GaN SiC |
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