CG2H30070F
- Manufacturer Wolfspeed / Cree
- Part Number CG2H30070F
- Description RF JFET Transistors GaN HEMT DC-2.0GHz, 60 Watt
- Category RF JFET Transistors
Specifications
| Package | 440224 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Transistor Polarity | N-Channel |
| Development Kit | CG2H30070F-TB1 |
| Vgs th - Gate-Source Threshold Voltage | - 3.8 V |
| Mounting Style | Screw Mount |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | - 10 V, 2 V |
| Maximum Drain Gate Voltage | - |
| Brand | Wolfspeed / Cree |
| Shipping Restrictions | |
| Gain | 12.4 dB |
| Product Type | RF JFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | HEMT |
| Forward Transconductance - Min | - |
| Id - Continuous Drain Current | 12 A |
| Output Power | 70 W |
| Operating Frequency | 0.5 GHz to 3 GHz |
| RoHS | Y |
| Subcategory | Transistors |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | - |
| Technology | GaN |
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