CDM2206-800LR
- Manufacturer Central Semiconductor
- Part Number CDM2206-800LR
- Description MOSFET N-Ch 800V LR FET 6.0A 2.8nC 0.8Ohm
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Bulk |
| Min. Pack | 1,200 |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 24.3 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 25.6 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Central Semiconductor |
| Unit Weight | 0.063493 oz |
| Number of Channels | 1 Channel |
| Tradename | UltraMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 6 A |
| Rds On - Drain-Source Resistance | 800 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 42.3 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CDM220 |
| Typical Turn-On Delay Time | 9.3 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 110 W |
| Rise Time | 22.7 ns |
| Technology | Si |
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