CDM22010-650
- Manufacturer Central Semiconductor
- Part Number CDM22010-650
- Description MOSFET 650Vds 30Vgs 10A 40A 8.0nC 0.88Ohm
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Bulk |
| Min. Pack | 1,200 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 20 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | CDM22010-650 PBFREE |
| Fall Time | 36 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Central Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 5 A |
| Rds On - Drain-Source Resistance | 1 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | CDM22010 |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 156 W |
| Rise Time | 33 ns |
| Technology | Si |
Need pricing on CDM22010-650?
Tell us your quantity and target price. We reply the same business day.