C3M0065090D
- Manufacturer Wolfspeed / Cree
- Part Number C3M0065090D
- Description MOSFET G3 SiC MOSFET 900V, 65mOhm
- Category MOSFET
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Qg - Gate Charge | 30.4 nC |
| Vgs - Gate-Source Voltage | 18 V, - 8 V |
| Type | Silicon Carbide MOSFET |
| Fall Time | 25 ns |
| Mounting Style | Through Hole |
| Product | Power MOSFET |
| Product Category | MOSFET |
| Brand | Wolfspeed / Cree |
| Unit Weight | 1.340411 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 11.6 S |
| Id - Continuous Drain Current | 36 A |
| Rds On - Drain-Source Resistance | 90 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 28 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 21 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W |
| Rise Time | 36 ns |
| Technology | SiC |
Need pricing on C3M0065090D?
Tell us your quantity and target price. We reply the same business day.