C3M0016120K
- Manufacturer Cree, Inc.
- Part Number C3M0016120K
- Description MOSFET SiC MOSFET G3 1200V 16mOhms
- Category MOSFET
Specifications
| Package | TO-247-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Qg - Gate Charge | 211 nC |
| Vgs - Gate-Source Voltage | 15 V |
| Fall Time | 13 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Cree, Inc. |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 115 A |
| Rds On - Drain-Source Resistance | 28.8 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 65 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 34 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 556 W |
| Rise Time | 33 ns |
| Technology | SiC |
Need pricing on C3M0016120K?
Tell us your quantity and target price. We reply the same business day.