BUTW92
- Manufacturer STMicroelectronics
- Part Number BUTW92
- Description Bipolar Transistors - BJT NPN Hi-Curr High Spd
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-247-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 7 V |
| Width | 5.15 mm (Max) |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | STMicroelectronics |
| DC Current Gain hFE Max | 65 |
| Unit Weight | 0.229281 oz |
| Collector- Emitter Voltage VCEO Max | 250 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 15.75 mm (Max) |
| RoHS | Y |
| Continuous Collector Current | 60 A |
| Collector-Emitter Saturation Voltage | 0.8 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | BUTW92 |
| Height | 20.15 mm (Max) |
| Collector- Base Voltage VCBO | 500 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 180 W |
| DC Collector/Base Gain hfe Min | 9 |
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