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BUT70W

  • Manufacturer STMicroelectronics
  • Part Number BUT70W
  • Description Bipolar Transistors - BJT NPN High Power
  • Category Bipolar Transistors - BJT
Specifications
Package TO-247-3
Min. Pack 600
Transistor Polarity NPN
Emitter- Base Voltage VEBO 7 V
Width 5.15 mm
Product Category Bipolar Transistors - BJT
Brand STMicroelectronics
Unit Weight 0.229281 oz
Collector- Emitter Voltage VCEO Max 125 V
Product Type BJTs - Bipolar Transistors
Maximum Operating Temperature + 150 C
Length 15.75 mm
Maximum DC Collector Current 70 A
RoHS Y
Collector-Emitter Saturation Voltage 900 mV
Configuration Single
Subcategory Transistors
Series BUT70W
Height 20.15 mm
Mounting Style Through Hole
Collector- Base Voltage VCBO 200 V
Minimum Operating Temperature - 65 C
Pd - Power Dissipation 200 W

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