BUK9K18-40E,115
- Manufacturer Nexperia
- Part Number BUK9K18-40E,115
- Description MOSFET Dual N-channel 40 V 19.5 mo FET
- Category MOSFET
Specifications
| Package | LFPAK56D-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 17.1 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.7 V |
| Qg - Gate Charge | 14.5 nC |
| Vgs - Gate-Source Voltage | 15 V |
| Fall Time | 9.9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Nexperia |
| Unit Weight | |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 2 N-Channel |
| Id - Continuous Drain Current | 30 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 17.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 38 W |
| Rise Time | 4.6 ns |
| Technology | Si |
Need pricing on BUK9K18-40E,115?
Tell us your quantity and target price. We reply the same business day.