BUK7E5R2-100E,127
- Manufacturer Nexperia
- Part Number BUK7E5R2-100E,127
- Description MOSFET N-channel TrenchMOS standard level FET
- Category MOSFET
Specifications
| Package | I2PAK-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 4.1 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 180 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 80 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Nexperia |
| Unit Weight | 0.081130 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 120 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 158 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 37 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 349 W |
| Rise Time | 62 ns |
| Technology | Si |
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