BTS247ZE3062AATMA2
- Manufacturer Infineon Technologies
- Part Number BTS247ZE3062AATMA2
- Description MOSFET N-Ch 55V 19A D2PAK-4
- Category MOSFET
Specifications
| Package | TO-263-5 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 18 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Width | 9.25 mm |
| Qg - Gate Charge | 60 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BTS247Z E3062A SP000910846 |
| Fall Time | 20 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.056438 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 10 S |
| Id - Continuous Drain Current | 19 A |
| Length | 10 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 30 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BTS247 |
| Height | 4.4 mm |
| Packaging | |
| Typical Turn-On Delay Time | 15 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 120 W |
| Rise Time | 30 ns |
| Technology | Si |
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