BSZ165N04NS G
- Manufacturer Infineon Technologies
- Part Number BSZ165N04NS G
- Description MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3
- Category MOSFET
Specifications
| Package | TSDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 3.3 mm |
| Qg - Gate Charge | 10 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BSZ165N04NSGATMA1 BSZ165N4NSGXT SP000391523 |
| Fall Time | 2.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 12 S |
| Id - Continuous Drain Current | 31 A |
| Length | 3.3 mm |
| Rds On - Drain-Source Resistance | 13.8 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 6.8 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 25 W |
| Rise Time | 1 ns |
| Technology | Si |
Need pricing on BSZ165N04NS G?
Tell us your quantity and target price. We reply the same business day.