BSZ100N06LS3GATMA1
- Manufacturer Infineon Technologies
- Part Number BSZ100N06LS3GATMA1
- Description MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
- Category MOSFET
Specifications
| Package | PG-TSDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 3.3 mm |
| Qg - Gate Charge | 34 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | BSZ100N06LS3 BSZ1N6LS3GXT G SP000453672 |
| Fall Time | 8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.002681 oz |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 20 S |
| Id - Continuous Drain Current | 20 A |
| Length | 3.3 mm |
| Rds On - Drain-Source Resistance | 10 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 50 W |
| Rise Time | 58 ns |
| Technology | Si |
Need pricing on BSZ100N06LS3GATMA1?
Tell us your quantity and target price. We reply the same business day.