BSZ050N03MS G
- Manufacturer Infineon Technologies
- Part Number BSZ050N03MS G
- Description MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
- Category MOSFET
Specifications
| Package | TSDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Width | 3.3 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BSZ050N03MSGATMA1 BSZ5N3MSGXT SP000311518 |
| Fall Time | 3.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 15 A |
| Length | 3.3 mm |
| Rds On - Drain-Source Resistance | 4.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3M |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 6.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.1 W |
| Rise Time | 4.2 ns |
| Technology | Si |
Need pricing on BSZ050N03MS G?
Tell us your quantity and target price. We reply the same business day.