BSZ009NE2LS5ATMA1
- Manufacturer Infineon Technologies
- Part Number BSZ009NE2LS5ATMA1
- Description MOSFET 25V Mosfet 0,9mOhm, PQFN 3x3
- Category MOSFET
Specifications
| Package | TSDSON-8 FL |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 92 nC |
| Vgs - Gate-Source Voltage | 16 V |
| Part # Aliases | BSZ009NE2LS5 SP002103848 |
| Fall Time | 17 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 40 A |
| Rds On - Drain-Source Resistance | 1.2 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 31 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 69 W |
| Rise Time | 9 ns |
| Technology | Si |
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