BSV236SP H6327
- Manufacturer Infineon Technologies
- Part Number BSV236SP H6327
- Description MOSFET P-Ch -20V -1.5A SOT-363-6
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 1.25 mm |
| Qg - Gate Charge | - 5.7 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Part # Aliases | BSV236SPH6327XT BSV236SPH6327XTSA1 SP000917672 |
| Fall Time | 12.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000265 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 2.2 S |
| Id - Continuous Drain Current | 1.5 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 131 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 14.1 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSV236 |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 560 mW |
| Rise Time | 8.5 ns |
| Technology | Si |
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