BSS83P H6327
- Manufacturer Infineon Technologies
- Part Number BSS83P H6327
- Description MOSFET P-Ch SOT-23-3
- Category MOSFET
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 1.3 mm |
| Qg - Gate Charge | 2.38 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Part # Aliases | BSS83PH6327XT BSS83PH6327XTSA1 SP000702486 |
| Fall Time | 61 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000282 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 0.24 S |
| Id - Continuous Drain Current | 330 mA |
| Length | 2.9 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 56 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 23 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 360 mW |
| Rise Time | 71 ns |
| Technology | Si |
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