BSS816NW H6327
- Manufacturer Infineon Technologies
- Part Number BSS816NW H6327
- Description MOSFET N-Ch 20V 1.4A SOT-323-3
- Category MOSFET
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 300 mV |
| Width | 1.3 mm |
| Qg - Gate Charge | 600 pC |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | BSS816NWH6327XT BSS816NWH6327XTSA1 SP000917562 |
| Fall Time | 2.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000176 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 4.9 S |
| Id - Continuous Drain Current | 1.4 A |
| Length | 2.9 mm |
| Rds On - Drain-Source Resistance | 107 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 11 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSS816 |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.3 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Rise Time | 9 ns |
| Technology | Si |
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