BSS209PWH6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BSS209PWH6327XTSA1
- Description MOSFET P-Ch -20V -630mA SOT-323-3
- Category MOSFET
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Width | 1.25 mm |
| Qg - Gate Charge | - 1 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Part # Aliases | BSS209PW BSS29PWH6327XT H6327 SP000750498 |
| Fall Time | 4.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000176 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 870 mS |
| Id - Continuous Drain Current | 630 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 550 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSS209 |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 2.6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 300 mW |
| Rise Time | 7 ns |
| Technology | Si |
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