BSS138W H6327
- Manufacturer Infineon Technologies
- Part Number BSS138W H6327
- Description MOSFET N-Ch SOT-323-3
- Category MOSFET
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Width | 1.25 mm |
| Qg - Gate Charge | 1 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | BSS138WH6327XT BSS138WH6327XTSA1 SP000924068 |
| Fall Time | 8.2 ns |
| Mounting Style | SMD/SMT |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000176 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 0.12 S |
| Id - Continuous Drain Current | 280 mA |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 3.5 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 6.7 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 2.2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Rise Time | 3 ns |
| Technology | Si |
Need pricing on BSS138W H6327?
Tell us your quantity and target price. We reply the same business day.