BSP75GQTA
- Manufacturer Diodes Incorporated
- Part Number BSP75GQTA
- Description MOSFET Low Side IntelliFET
- Category MOSFET
Specifications
| Package | SOT-223-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 385 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | - |
| Vgs - Gate-Source Voltage | 36 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.003951 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 1.6 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 13 us |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 2.2 us |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 2.5 W |
| Technology | Si |
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