BSP613P H6327
- Manufacturer Infineon Technologies
- Part Number BSP613P H6327
- Description MOSFET P-Ch -60V -2.9A SOT-223-3
- Category MOSFET
Specifications
| Package | SOT-223-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Width | 3.5 mm |
| Qg - Gate Charge | 22 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | BSP613PH6327XTSA1 SP001058788 |
| Fall Time | 7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.003951 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 2.7 S |
| Id - Continuous Drain Current | 2.9 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 130 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSP613 |
| Height | 1.6 mm |
| Packaging | |
| Typical Turn-On Delay Time | 6.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.8 W |
| Rise Time | 9 ns |
| Technology | Si |
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