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BSP372NH6327XTSA1

  • Manufacturer Infineon Technologies
  • Part Number BSP372NH6327XTSA1
  • Description MOSFET SMALL SIGNAL N-CH
  • Category MOSFET
Specifications
Package SOT-223-4
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 100 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 800 mV
Width 3.5 mm
Qg - Gate Charge 9.5 nC
Vgs - Gate-Source Voltage 10 V
Part # Aliases BSP372N H6327 SP001059326
Fall Time 18 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand Infineon Technologies
Unit Weight 0.003951 oz
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 5.1 S
Id - Continuous Drain Current 1.8 A
Length 6.5 mm
Rds On - Drain-Source Resistance 230 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 47.3 ns
Subcategory MOSFETs
Channel Mode Enhancement
Height 1.6 mm
Packaging
Typical Turn-On Delay Time 5.1 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1.8 W
Rise Time 6.7 ns
Technology Si

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