BSP317PH6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BSP317PH6327XTSA1
- Description MOSFET P-Ch -250V -430mA SOT-223-3
- Category MOSFET
Specifications
| Package | PG-SOT-223-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 3.5 mm |
| Qg - Gate Charge | - 11.6 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | BSP317P H6327 SP001058758 |
| Fall Time | 67 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.003880 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 380 mS |
| Id - Continuous Drain Current | 430 mA |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 4 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 254 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSP317 |
| Height | 1.6 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.8 W |
| Rise Time | 11.1 ns |
| Technology | Si |
Need pricing on BSP317PH6327XTSA1?
Tell us your quantity and target price. We reply the same business day.