BSP299H6327XUSA1
- Manufacturer Infineon Technologies
- Part Number BSP299H6327XUSA1
- Description MOSFET N-Ch 500V 400mA SOT-223-3
- Category MOSFET
Specifications
| Package | SOT-223-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Width | 3.5 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | - |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BSP299 H6327 SP001058628 |
| Fall Time | 30 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.003951 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 300 mS |
| Id - Continuous Drain Current | 400 mA |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 3.1 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 55 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSP299 |
| Height | 1.6 mm |
| Packaging | |
| Typical Turn-On Delay Time | 8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.8 W |
| Rise Time | 15 ns |
| Technology | Si |
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