BSO220N03MD G
- Manufacturer Infineon Technologies
- Part Number BSO220N03MD G
- Description MOSFET N-Ch 30V 7.7A DSO-8 OptiMOS 3M
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 3.9 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 10 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BSO220N03MDGXUMA1 BSO22N3MDGXT SP000447478 |
| Fall Time | 3.4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.019048 oz |
| Number of Channels | 2 Channel |
| Tradename | OptiMOS |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 9 S |
| Id - Continuous Drain Current | 7.7 A |
| Length | 4.9 mm |
| Rds On - Drain-Source Resistance | 18.3 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 6.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3M |
| Height | 1.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 2.8 ns |
| Technology | Si |
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