BSO211PHXUMA1
- Manufacturer Infineon Technologies
- Part Number BSO211PHXUMA1
- Description MOSFET SMALL SIGNAL N-CH
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 3.9 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | - 10 nC, - 10 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Part # Aliases | BSO211P H SP000613844 |
| Fall Time | 27 ns, 27 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.019048 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 P-Channel |
| Forward Transconductance - Min | 8 S, 8 S |
| Id - Continuous Drain Current | 4.6 A |
| Length | 4.9 mm |
| Rds On - Drain-Source Resistance | 54 mOhms, 54 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 23 ns, 23 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSO211 |
| Height | 1.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 9 ns, 9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 13 ns, 13 ns |
| Technology | Si |
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