BSO080P03NS3E G
- Manufacturer Infineon Technologies
- Part Number BSO080P03NS3E G
- Description MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Width | 3.9 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | - 61 nC |
| Vgs - Gate-Source Voltage | 25 V |
| Part # Aliases | BSO080P03NS3EGXUMA1 BSO8P3NS3EGXT SP000472992 |
| Fall Time | 19 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.019048 oz |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 44 S |
| Id - Continuous Drain Current | 14.8 A |
| Length | 4.9 mm |
| Rds On - Drain-Source Resistance | 8 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 64 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3P3 |
| Height | 1.75 mm |
| Packaging | |
| Typical Turn-On Delay Time | 16 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.5 W |
| Rise Time | 47 ns |
| Technology | Si |
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