BSM75GAR120DN2
- Manufacturer Infineon Technologies
- Part Number BSM75GAR120DN2
- Description IGBT Transistors 1200V 100A GAR CH
- Category IGBT Transistors
Specifications
| Package | IS4 (34 mm )-5 |
| Packaging | Tray |
| Min. Pack | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Width | 34 mm |
| Part # Aliases | BSM75GAR120DN2HOSA1 SP000100462 |
| Mounting Style | Chassis Mount |
| Continuous Collector Current at 25 C | 100 A |
| Product Category | IGBT Transistors |
| Brand | Infineon Technologies |
| Unit Weight | 5.436423 oz |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Product Type | IGBT Transistors |
| Maximum Operating Temperature | + 150 C |
| Length | 94 mm |
| Maximum Gate Emitter Voltage | 20 V |
| RoHS | Y |
| Continuous Collector Current | 105 A |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Configuration | Single |
| Subcategory | IGBTs |
| Height | 30.5 mm |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 625 W |
| Technology | Si |
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