BSM600C12P3G201
- Manufacturer ROHM Semiconductor
- Part Number BSM600C12P3G201
- Description Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02
- Category Discrete Semiconductor Modules
Specifications
| Package | Module |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Transistor Polarity | N-Channel |
| Vf - Forward Voltage | 1.8 V at 600 A |
| Vgs - Gate-Source Voltage | - 4 V, 22 V |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Typical Delay Time | 70 ns |
| Type | SiC Power Module |
| Fall Time | 65 ns |
| Mounting Style | Screw Mount |
| Product | Power Semiconductor Modules |
| Product Category | Discrete Semiconductor Modules |
| Brand | ROHM Semiconductor |
| Configuration | Chopper |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 576 A |
| RoHS | Y |
| Product Type | Discrete Semiconductor Modules |
| Typical Turn-Off Delay Time | 240 ns |
| Subcategory | Discrete Semiconductor Modules |
| Series | BSMx |
| Typical Turn-On Delay Time | 70 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 2460 W |
| Rise Time | 50 ns |
| Technology | SiC |
Need pricing on BSM600C12P3G201?
Tell us your quantity and target price. We reply the same business day.