BSM50GX120DN2
- Manufacturer Infineon Technologies
- Part Number BSM50GX120DN2
- Description IGBT Modules
- Category IGBT Modules
Specifications
| Packaging | Tray |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 200 nA |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Technology | Si |
| Brand | Infineon Technologies |
| Continuous Collector Current at 25 C | 78 A |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 400 W |
| Part # Aliases | BSM50GX120DN2BOSA1 SP000100372 |
| Configuration | 3-Phase |
| Maximum Operating Temperature | + 150 C |
| RoHS | Y |
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