BSL205NH6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BSL205NH6327XTSA1
- Description MOSFET SMALL SIGNAL+P-CH
- Category MOSFET
Specifications
| Package | TSOP-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Width | 1.5 mm |
| Qg - Gate Charge | 3.2 nC, 3.2 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Part # Aliases | BSL205N H6327 SP001100646 |
| Fall Time | 2.4 ns, 2.4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000526 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 8.6 S, 8.6 S |
| Id - Continuous Drain Current | 2.5 A |
| Length | 3 mm |
| Rds On - Drain-Source Resistance | 39 mOhms, 39 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 11 ns, 11 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 1.1 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5.8 ns, 5.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Rise Time | 2.9 ns, 2.9 ns |
| Technology | Si |
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