BSD840N H6327
- Manufacturer Infineon Technologies
- Part Number BSD840N H6327
- Description MOSFET N-Ch 20V 880mA SOT-363-6
- Category MOSFET
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 270 mOhms, 270 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 300 mV |
| Width | 1.25 mm |
| Qg - Gate Charge | 260 pC, 260 pC |
| Vgs - Gate-Source Voltage | 8 V |
| Part # Aliases | BSD840NH6327XTSA1 BSD84NH6327XT SP000917654 |
| Fall Time | 900 ps, 900 ps |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 2.5 S, 2.5 S |
| Id - Continuous Drain Current | 880 mA |
| Length | 2 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 7.8 ns, 7.8 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSD840 |
| Height | 0.9 mm |
| Packaging | |
| Typical Turn-On Delay Time | 1.9 ns, 1.9 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Rise Time | 2.2 ns, 2.2 ns |
| Technology | Si |
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