BSD235CH6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BSD235CH6327XTSA1
- Description MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
- Category MOSFET
Specifications
| Package | PG-SOT-363-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel, P-Channel |
| Rds On - Drain-Source Resistance | 350 mOhms, 1.2 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 700 mV, 1.2 V |
| Width | 9.25 mm |
| Qg - Gate Charge | 340 pC, - 400 pC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Part # Aliases | BSD235C BSD235CH6327XT H6327 SP000917610 |
| Fall Time | 1.2 ns, 3.2 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 700 mS, 2 S |
| Id - Continuous Drain Current | 950 mA, 530 mA |
| Length | 10 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 4.5 ns, 5.1 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | BSD235 |
| Height | 4.4 mm |
| Packaging | |
| Typical Turn-On Delay Time | 3.8 ns, 3.8 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 500 mW (1/2 W) |
| Rise Time | 3.6 ns, 5 ns |
| Technology | Si |
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