BSC109N10NS3 G
- Manufacturer Infineon Technologies
- Part Number BSC109N10NS3 G
- Description MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
- Category MOSFET
Specifications
| Package | TDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Width | 5.15 mm |
| Part # Aliases | BSC109N10NS3GATMA1 BSC19N1NS3GXT SP000778132 |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.010582 oz |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Product Type | MOSFET |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 63 A |
| Length | 5.9 mm |
| Rds On - Drain-Source Resistance | 10.9 mOhms |
| RoHS | Y |
| Configuration | Single |
| Subcategory | MOSFETs |
| Series | OptiMOS 3 |
| Height | 1.27 mm |
| Packaging | |
| Technology | Si |
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