BSC072N03LDGATMA1
- Manufacturer Infineon Technologies
- Part Number BSC072N03LDGATMA1
- Description MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
- Category MOSFET
Specifications
| Package | TDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 5.15 mm |
| Qg - Gate Charge | 41 nC, 41 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BSC072N03LD BSC72N3LDGXT G SP000359607 |
| Fall Time | 4 ns, 4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Unit Weight | 0.003425 oz |
| Number of Channels | 2 Channel |
| Tradename | OptiMOS |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 28 S, 28 S |
| Id - Continuous Drain Current | 20 A |
| Length | 5.9 mm |
| Rds On - Drain-Source Resistance | 6 mOhms, 6 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25 ns, 25 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 3 |
| Height | 1.27 mm |
| Packaging | |
| Typical Turn-On Delay Time | 6 ns, 6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 57 W |
| Rise Time | 4 ns, 4 ns |
| Technology | Si |
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