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BSC030N04NSGXT

  • Manufacturer Infineon Technologies
  • Part Number BSC030N04NSGXT
  • Description MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
  • Category MOSFET
Specifications
Package TDSON-8
Packaging Reel
Min. Pack 5,000
Vds - Drain-Source Breakdown Voltage 40 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 2 V
Width 5.15 mm
Qg - Gate Charge 61 nC
Vgs - Gate-Source Voltage 20 V
Part # Aliases BSC030N04NS BSC030N04NSGATMA1 G SP000354811
Fall Time 5 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand Infineon Technologies
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 46 S
Id - Continuous Drain Current 100 A
Length 5.9 mm
Rds On - Drain-Source Resistance 2.5 mOhms
Product Type MOSFET
Typical Turn-Off Delay Time 23 ns
Subcategory MOSFETs
Channel Mode Enhancement
Height 1.27 mm
Typical Turn-On Delay Time 16 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 83 W
Rise Time 4 ns
Technology Si

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