BSC026N02KS G
- Manufacturer Infineon Technologies
- Part Number BSC026N02KS G
- Description MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
- Category MOSFET
Specifications
| Package | TDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 700 mV |
| Width | 5.15 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 52.7 nC |
| Vgs - Gate-Source Voltage | 12 V |
| Part # Aliases | BSC026N02KSGAUMA1 BSC26N2KSGXT SP000379664 |
| Fall Time | 9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 95 S |
| Id - Continuous Drain Current | 100 A |
| Length | 5.9 mm |
| Rds On - Drain-Source Resistance | 2.1 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 52 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | OptiMOS 2 |
| Height | 1.27 mm |
| Packaging | |
| Typical Turn-On Delay Time | 21 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 78 W |
| Rise Time | 115 ns |
| Technology | Si |
Need pricing on BSC026N02KS G?
Tell us your quantity and target price. We reply the same business day.