BSC010N04LSTATMA1
- Manufacturer Infineon Technologies
- Part Number BSC010N04LSTATMA1
- Description MOSFET DIFFERENTIATED MOSFETS
- Category MOSFET
Specifications
| Package | PG-TDSON-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 133 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | BSC010N04LST SP001657068 |
| Fall Time | 9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 140 S |
| Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 1 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 46 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 10 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 139 W |
| Rise Time | 12 ns |
| Technology | Si |
Need pricing on BSC010N04LSTATMA1?
Tell us your quantity and target price. We reply the same business day.