BSB008NE2LXXUMA1
- Manufacturer Infineon Technologies
- Part Number BSB008NE2LXXUMA1
- Description MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
- Category MOSFET
Specifications
| Package | WDSON-2-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 600 uOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 5.05 mm |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 343 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | BSB8NE2LXXT SP000880866 |
| Fall Time | 32.4 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Infineon Technologies |
| Number of Channels | 1 Channel |
| Tradename | OptiMOS |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 120 S |
| Id - Continuous Drain Current | 180 A |
| Length | 6.35 mm |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 75 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 0.7 mm |
| Packaging | |
| Typical Turn-On Delay Time | 12.6 ns |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 89 W |
| Rise Time | 47.2 ns |
| Technology | Si |
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