BGA855N6E6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BGA855N6E6327XTSA1
- Description RF Amplifier Low Noise Amplifier
- Category RF Amplifier
Specifications
| Package | TSNP-6 |
| Min. Pack | 1 |
| Operating Supply Current | 4.4 mA |
| Input Return Loss | 11 dB |
| Isolation dB | 22 dB |
| Part # Aliases | BGA855N6 SP002337750 |
| Type | LNA |
| Operating Supply Voltage | 1.1 V to 3.3 V |
| Packaging | |
| Product Category | RF Amplifier |
| Brand | Infineon Technologies |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Gain | 17.6 dB |
| Product Type | RF Amplifier |
| Maximum Operating Temperature | + 85 C |
| P1dB - Compression Point | - 14 dBm |
| OIP3 - Third Order Intercept | 1 dBm |
| Operating Frequency | 1164 MHz to 1300 MHz |
| RoHS | Y |
| Subcategory | Wireless & RF Integrated Circuits |
| Series | BGA855N6 |
| Test Frequency | 1214 MHz |
| NF - Noise Figure | 0.6 dB |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 60 mW |
| Technology | SiGe |
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