BGA7H1N6E6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BGA7H1N6E6327XTSA1
- Description RF Amplifier RF SILICON MMIC
- Category RF Amplifier
Specifications
| Package | TSNP-6 |
| Min. Pack | 1 |
| Operating Supply Current | 4.7 mA |
| Input Return Loss | 11 dB |
| Isolation dB | 21 dB |
| Part # Aliases | 7H1N6 BGA E6327 SP001109130 |
| Type | LNA for LTE |
| Operating Supply Voltage | 3.3 V |
| Mounting Style | SMD/SMT |
| Product Category | RF Amplifier |
| Brand | Infineon Technologies |
| Unit Weight | 0.000032 oz |
| Gain | 12.5 dB |
| Product Type | RF Amplifier |
| Maximum Operating Temperature | + 85 C |
| P1dB - Compression Point | - 1 dBm |
| OIP3 - Third Order Intercept | 6 dBm |
| Operating Frequency | 2300 MHz to 2690 MHz |
| RoHS | Y |
| Subcategory | Wireless & RF Integrated Circuits |
| Packaging | |
| NF - Noise Figure | 0.6 dB |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 60 mW |
| Technology | SiGe |
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