BFU710F,115
- Manufacturer NXP Semiconductors
- Part Number BFU710F,115
- Description RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
- Category RF Bipolar Transistors
Specifications
| Package | SOT-343 |
| Min. Pack | 1 |
| Mounting Style | SMD/SMT |
| Product Category | RF Bipolar Transistors |
| Transistor Type | Bipolar |
| Subcategory | Transistors |
| Type | RF Silicon Germanium |
| DC Collector/Base Gain hfe Min | 200 |
| Pd - Power Dissipation | 136 mW |
| Packaging | |
| Collector- Emitter Voltage VCEO Max | 2.8 V |
| Unit Weight | 0.000235 oz |
| Emitter- Base Voltage VEBO | 1 V |
| Product Type | RF Bipolar Transistors |
| Operating Frequency | 110 GHz |
| Part # Aliases | 934064613115 |
| Continuous Collector Current | 10 mA |
| Technology | SiGe |
| Brand | NXP Semiconductors |
| RoHS | Y |
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