BFU520AR
- Manufacturer NXP Semiconductors
- Part Number BFU520AR
- Description RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
- Category RF Bipolar Transistors
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 2 V |
| Part # Aliases | 934067697215 |
| Type | Wideband RF Transistor |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 60 |
| DC Current Gain hFE Max | 200 |
| Unit Weight | 0.000266 oz |
| Collector- Emitter Voltage VCEO Max | 16 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar Wideband |
| Operating Temperature Range | - 40 C to + 150 C |
| Maximum DC Collector Current | 50 mA |
| Operating Frequency | 900 MHz |
| RoHS | Y |
| Continuous Collector Current | 5 mA |
| Gain Bandwidth Product fT | 10 GHz |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 24 V |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 450 mW |
| Technology | Si |
| Brand | NXP Semiconductors |
Need pricing on BFU520AR?
Tell us your quantity and target price. We reply the same business day.