BFS 17S H6327
- Manufacturer Infineon Technologies
- Part Number BFS 17S H6327
- Description RF Bipolar Transistors RF BIP TRANSISTOR
- Category RF Bipolar Transistors
Specifications
| Package | SOT-363 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 2.5 V |
| Part # Aliases | BFS17SH6327XT BFS17SH6327XTSA1 SP000750448 |
| Type | RF Bipolar Power |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 20 |
| Unit Weight | 0.000212 oz |
| Collector- Emitter Voltage VCEO Max | 15 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar Power |
| Operating Frequency | 1 GHz |
| RoHS | Y |
| Continuous Collector Current | 25 mA |
| Gain Bandwidth Product fT | 1.3 GHz |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | BFS17 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 280 mW |
| Technology | Si |
| Brand | Infineon Technologies |
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