BFR840L3RHESDE6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BFR840L3RHESDE6327XTSA1
- Description RF Bipolar Transistors RF BIP TRANSISTORS
- Category RF Bipolar Transistors
Specifications
| Package | TSLP-3 |
| Min. Pack | 1 |
| Emitter- Base Voltage VEBO | 2.9 V |
| Part # Aliases | 840L3RHESD BFR BFR84L3RHESDE6327XT E6327 SP000978848 |
| Type | RF Silicon Germanium |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 2.25 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar |
| Operating Frequency | 75 GHz |
| RoHS | Y |
| Continuous Collector Current | 35 mA |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | BFR840L3 |
| Mounting Style | SMD/SMT |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 75 mW |
| Technology | SiGe |
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