BFR 183 E6327
- Manufacturer Infineon Technologies
- Part Number BFR 183 E6327
- Description RF Bipolar Transistors NPN RF Transistor 12V 65mA 450mW
- Category RF Bipolar Transistors
Specifications
| Package | SOT-23 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 2 V |
| Width | 1.3 mm |
| Part # Aliases | BFR183E6327HTSA1 BFR183E6327XT SP000011054 |
| Type | RF Bipolar Small Signal |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 70 at 15 mA at 8 V |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 12 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar |
| Length | 2.9 mm |
| Maximum DC Collector Current | 0.065 A |
| Operating Frequency | 8000 MHz |
| RoHS | Y |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | BFR183 |
| Height | 1 mm |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 20 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 450 mW |
| Technology | Si |
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