BFR 182 E6327
- Manufacturer Infineon Technologies
- Part Number BFR 182 E6327
- Description RF Bipolar Transistors NPN Silicon RF TRANSISTOR
- Category RF Bipolar Transistors
Specifications
| Package | SOT-23 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 2 V |
| Width | 1.3 mm |
| Part # Aliases | BFR182E6327HTSA1 BFR182E6327XT SP000011051 |
| Type | RF Bipolar Small Signal |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 70 |
| DC Current Gain hFE Max | 70 at 10 mA at 8 V |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | 12 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar |
| Length | 2.9 mm |
| Maximum DC Collector Current | 0.035 A |
| Operating Frequency | 8000 MHz |
| RoHS | Y |
| Continuous Collector Current | 0.035 A |
| Gain Bandwidth Product fT | 8000 MHz |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | BFR182 |
| Height | 1 mm |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 20 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 250 mW |
| Technology | Si |
| Brand | Infineon Technologies |
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