BFQ19SH6327XTSA1
- Manufacturer Infineon Technologies
- Part Number BFQ19SH6327XTSA1
- Description Bipolar Transistors - BJT RF BIP TRANSISTORS
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-89-4 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 3 V |
| Width | 2.5 mm |
| Part # Aliases | 19S BFQ H6327 SP001125294 |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Infineon Technologies |
| DC Current Gain hFE Max | 140 |
| Unit Weight | 0.004603 oz |
| Collector- Emitter Voltage VCEO Max | 15 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 4.5 mm |
| RoHS | Y |
| Continuous Collector Current | 120 mA |
| Gain Bandwidth Product fT | 5.5 GHz |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Height | 1.5 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 20 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 1 W |
| DC Collector/Base Gain hfe Min | 70 |
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