BFP 740FESD H6327
- Manufacturer Infineon Technologies
- Part Number BFP 740FESD H6327
- Description RF Bipolar Transistors RF BI
- Category RF Bipolar Transistors
Specifications
| Package | TSFP-4 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Part # Aliases | BFP740FESDH6327XTSA1 BFP74FESDH6327XT SP000890036 |
| Type | RF Silicon Germanium |
| Mounting Style | SMD/SMT |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 160 |
| Unit Weight | 0.000063 oz |
| Collector- Emitter Voltage VCEO Max | 4.2 V |
| Configuration | Single |
| Transistor Type | Bipolar |
| Operating Frequency | 47 GHz |
| RoHS | Y |
| Continuous Collector Current | 45 mA |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | BFP740 |
| Packaging | |
| Pd - Power Dissipation | 160 mW |
| Technology | SiGe |
| Brand | Infineon Technologies |
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